Field Modulated Conducting Polymers for Nanoelectronics

This NSERC funded Strategic Research Grant lead by Dr. Thomson and involving Dr. Freund and Dr. Buchanan is focused on developing new conducting polymer-based composites for electronic applications.  By controlling the movement of ions within the polymer it is possible to alter the conductivity of the material in the solid state.  Because the conductivity lasts after the field is removed, the movement of ions can be used as an memory bit. 

The cross-bar structure is used to deposit the conducting polymer across a 200 nanometer spacer.  An electrical potential is applied between the two to modulate the conductivity.

J. H. Zhao, D. J. Thomson*, M. Pilapil, R. G. Pillai, G. M. A. Rahman and M. S Freund*: “Field Enhanced Charge Carrier Reconfiguration in Electronic and Ionic-coupled Dynamic Polymer Resistive Memory” Nanotechnology, 21: 134003 (2010

G. M. A. Rahman, J. H. Zhao, D. J. Thomson, and M. S. Freund: “Compensation Doping in Conjugated Polymers: Engineering Dopable  Heterojunctions for Modulating Conductivity in the Solid State” J. Am. Chem. Soc. 131: 15600-15601 (2009)

J. H. Zhao, D. J. Thomson, R. Gopalakrishna Pillai and  M. S. Freund “Dynamic resistive crossbar memory based on conjugated polymer composite” Appl. Phys. Lett. 94: 092113 (2009)

R. Gopalakrishna Pillai, J. H. Zhao, M. S. Freund and D. J. Thomson: “Field-induced Carrier Generation in Conjugated Polymer Semiconductors for Dynamic, Asymmetric Junctions” Adv. Mat., 20: 49-53 (2008)